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| PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE * * High total power dissipation (PT=450mW) High hFE and good linearity Complementary to PJ2N9015 TO-92 SOT-23 * ABSOLUTE MAXIMUM RATINGS (T a= 25 C) Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 50 45 5 100 450 150 -55 ~150 Uint V V V mA mW C C P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2.Emitter 3.Collector ORDERING INFORMATION Device PJ2N9014CT PJ2N9014CX Operating Temperature -20+85 Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (T a= 25 C) Characte ristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Produce Noise Figure Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(ON) C ob fT NF Te st Conditions IC= 100A , IE =0 IC= 1mA , IB=0 IE =100A , IC=0 VCB= 50V , IE = 0 VEB= 5V , IC=0 VEB= 5V, IC =1 mA IC= 100 mA , IB=5mA IC= 100mA , IB=5mA VCE =5V, Ic =2 mA VCB =10V, IE =0 f=1MHz VCE =5V, Ic =10 mA VCE =5V, Ic =0.2 mA f=1KHz,Rs=2K Min 50 45 5 Typ Max Unit V V V 50 50 60 280 0.14 0.84 0.58 0.63 2.2 150 270 0.9 10 1000 0.3 1.0 0.7 3.5 nA nA V V V pF MHz dB hEF CLASSIFICATION Classification HFE A 60-150 B 100-300 C 200-600 D 400-1000 1-3 2002/01.rev.A PJ2N9014 NPN Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9014 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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